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| BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR380L3 Maximum Ratings Parameter Marking FC Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value Package TSLP-3-1 Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter TS 6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150 Value V mA mW C 96C 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Junction - soldering point2) Unit 140 K/W Jun-16-2003 BFR380L3 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 40 mA, VCE = 3 V hFE 60 130 200 IEBO 1 A ICBO 100 nA ICES 10 A V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 Jun-16-2003 BFR380L3 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available1) IC = 40 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 40 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz Transducer gain IC = 40 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz IC = 40 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz Third order intercept point at output2) VCE = 3 V, IC = 40 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 40 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz Unit 11 - 14 0.45 0.18 1 1.1 - GHz pF Ccb Cce Ceb Fmin dB Gma |S21e|2 IP3 11 6.5 29.5 dBm 13.5 9.5 dB P-1dB - 16 - 3 Jun-16-2003 BFR380L3 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 9.965 27.69 1.64 30 1.678 1.322 116.7 8.789 1.529 6.949 6.949 0 0 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = 116.376 736 22.802 0.011 9.71 221 0.782 0.496 0 0.472 0 0.5 0.975 mA A m V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.107 0.2676 1.056 6.9739 0.2564 0.101 0.5 0.338 840 0.202 0.75 1.11 300 fA pA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B C7 R1 L3 C B' Transistor Chip E' C' C6 Valid up to 6GHz E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes EHA07536 4 Jun-16-2003 C2 L1 C3 C5 L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = C7 = R1 = 0.575 0.575 0.275 33 28 131 8 8 24 300 204 nH nH nH fF fF fF fF fF fF fF |
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